Binghamton University 3 credits EECE
Physics, device structure, and operation of semiconductor lasers. Band structure in solids, optical processes in semiconductors, p-n junctions, and quasi-Fermi levels; rate equation model for semiconductor lasers, static and dynamic characteristics; characteristics of distributed feedback, Bragg reflector, vertical cavity and Fabry-Perot lasers. Lecture portion meets with EECE 433. Extra assignments, and/or final project will be required at the graduate level. Prerequisite: EECE 332. Offered every third semester. 3 credits.
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